The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
May. 07, 2019
Stmicroelectronics International N.v., Geneva, CH;
Matthieu Nongaillard, Grenoble, FR;
Thomas Oheix, Grenoble, FR;
STMICROELECTRONICS INTERNATIONAL N.V., Geneva, CH;
Abstract
An enhancement-mode high-electron-mobility transistor comprises a structure including a stack made of III-V semiconductor materials defining an interface and capable of forming a conduction layer in the form of a two-dimensional electron gas layer; a source electrode and a drain electrode forming an electrical contact with the conduction layer; and a gate electrode arranged on top of the structure, between the source electrode and the drain electrode. The structure comprises a bar that is arranged below the gate electrode and passes through the interface of the stack. The bar comprises two semiconductor portions exhibiting opposite types of doping, defining a p-n junction in proximity to the interface.