The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
Sep. 08, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yu-Cheng Shen, Hsinchu, TW;
Guan-Jie Shen, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/823468 (2013.01); H01L 29/42392 (2013.01); H01L 29/6656 (2013.01); H01L 29/66742 (2013.01); H01L 29/7848 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01);
Abstract
The present disclosure describes a semiconductor device and methods for forming the same. The semiconductor device includes nanostructures on a substrate and a source/drain region in contact with the nanostructures. The semiconductor device also includes a gate structure that includes first and second portions. The first portion is formed between each nanostructure of nanostructures. The second portion is formed under the bottom-most nanostructure of the plurality of nanostructures and extends under a top surface of the substrate.