The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2025

Filed:

Jul. 21, 2022
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Shih-Chieh Lin, Taichung, TW;

Shuen-Hsiang Ke, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); G01B 11/06 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32963 (2013.01); G01B 11/0683 (2013.01); H01L 21/302 (2013.01);
Abstract

An etching method of etching apparatus is disclosed. The etching apparatus performs an etching process on a material to be processed which includes a material layer and a mask layer formed on the material layer. The etching method includes the following steps. The mask layer is etched. A light intensity at a specific wavelength for light generated is detected when the etching process is performed on the mask layer to be processed and an end point detection signal is generated. An etching completion time of the mask layer to be etched is determined according to the end point detection signal. A thickness of the mask layer to be etched is calculated according to the etching completion time. An etching time of the material layer is adjusted according to the thickness of the mask layer to be etched. The material layer is etched after adjusting the etching time.


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Lin, Shih-Chieh. (2025). Etching method of etching apparatus (U.S. Patent No. 12249495). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12249495

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