The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2025

Filed:

Aug. 20, 2021
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Rouhollah Mousavi Iraei, Albuquerque, NM (US);

Kiran Pangal, Fremont, CA (US);

Saad P. Monasa, Sacramento, CA (US);

Mini Goel, Milpitas, CA (US);

Raymond Zeng, Cupertino, CA (US);

Hemant P. Rao, Albuquerque, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/0004 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/004 (2013.01); G11C 2013/0078 (2013.01); H10B 63/84 (2023.02);
Abstract

A state may be encoded into a memory cell comprising a phase change material (PM) region and a select device (SD) region by: applying a first current in the memory cell over a first time period, wherein the first current applied over the first time period causes the PM region of the memory cell to be placed into an amorphous state and the SD region of the memory cell to be placed into an amorphous state; and applying a second current in the memory cell over a second time period after the first time period, wherein the second current applied over the third time period causes the SD region of the memory cell to be placed into a crystalline state and the PM region of the memory cell to remain in the amorphous state.


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