Silicon-containing resist underlayer film-forming composition including organic group having ammonium group

Abstract

A composition for forming a resist underlayer film containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane, wherein the hydrolyzable silane contains a hydrolyzable silane of Formula (1):RRSi(R)  Formula (1)wherein Ris an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond; Ris an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, an acyloxyalkyl group, or an organic group having an acryloyl group, a methacryloyl group, a mercapto group, an amino group, an amide group, a hydroxyl group, an alkoxy group, an ester group, a sulfonyl group, or a cyano group, or any combination of these groups, and is bonded to a silicon atom via an Si—C bond; Rand Rare optionally bonded together to form a ring structure; Ris an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3; and the hydrolysis condensate contains an organic group having a salt structure formed between a counter anion derived from a nitric acid and a counter cation derived from a primary ammonium group, a secondary ammonium group, or a tertiary ammonium group.