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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12247297 B1

PDFFull Text
Date of Patent:
Mar. 11, 2025

Filed:

Oct. 27, 2020

Multilayer film structure and method for producing same

Applicants:

Tosoh Corporation, Shunan, JP;

National Institute for Materials Science, Tsukuba, JP;

Inventors:

Yuya Tsuchida, Ayase, JP;

Yuya Suemoto, Ayase, JP;

Yoshihiro Ueoka, Ayase, JP;

Masami Mesuda, Ayase, JP;

Hideto Kuramochi, Ayase, JP;

Takahiro Nagata, Tsukuba, JP;

Liwen Sang, Tsukuba, JP;

Toyohiro Chikyow, Tsukuba, JP;

Assignees:

TOSOH CORPORATION, Shunan, JP;

National Institute for Materials Science, Tsukuba, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Jaehwan Oh

Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 14/00 (2006.01); C23C 14/02 (2006.01); C23C 14/06 (2006.01); C23C 14/34 (2006.01); C23C 14/35 (2006.01); C23C 28/04 (2006.01); C30B 23/02 (2006.01); C30B 25/06 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 29/68 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 33/32 (2010.01); H01S 5/02 (2006.01);
U.S. Cl.
CPC ...
C23C 28/04 (2013.01); C23C 14/0036 (2013.01); C23C 14/021 (2013.01); C23C 14/0617 (2013.01); C23C 14/3407 (2013.01); C23C 14/35 (2013.01); C30B 23/025 (2013.01); C30B 25/06 (2013.01); C30B 25/186 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); C30B 29/68 (2013.01); H01L 21/02381 (2013.01); H01L 21/0243 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 21/02502 (2013.01); H01L 21/02513 (2013.01); H01L 21/0254 (2013.01); H01L 21/02587 (2013.01); H01L 21/02631 (2013.01); H01L 21/02658 (2013.01); H01L 21/02661 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 21/02491 (2013.01); H01L 21/02505 (2013.01); H01L 33/32 (2013.01); H01S 5/021 (2013.01);
Abstract

The present invention provides: a multilayer film structure which has high crystallinity and planarity; and a method for producing this multilayer film structure. This multilayer film structure is provided with: an Si (111) substrate; a first thin film that is arranged on the Si (111) substrate, while being formed of a nitride material and/or aluminum; and a second thin film that is arranged on the first thin film, while being formed of a nitride material. An amorphous layer having a thickness of 0 nm or more but less than 1.0 nm are present on the Si (111) substrate; and the full width at half maximum (FWHM) of a rocking curve of the (0002) plane at the surface of this multilayer film structure is 1.50° or less.

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