The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2025

Filed:

Aug. 10, 2022
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Chih-Wei Kuo, Tainan, TW;

Chung Yi Chiu, Tainan, TW;

Yi-Wei Tseng, New Taipei, TW;

Hsuan-Hsu Chen, Tainan, TW;

Chun-Lung Chen, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 52/80 (2023.01); H10B 61/00 (2023.01); H10N 52/00 (2023.01); H10N 52/01 (2023.01);
U.S. Cl.
CPC ...
H10N 52/80 (2023.02); H10B 61/00 (2023.02); H10N 52/00 (2023.02); H10N 52/01 (2023.02);
Abstract

A magnetic memory including a substrate, a spin-orbit torque (SOT) layer, a magnetic tunnel junction (MTJ) stack, a first protection layer, and a second protection layer is provided. The SOT layer is located over the substrate. The MTJ stack is located on the SOT layer. The first protection layer and the second protection layer are located on the sidewall of the MTJ stack. The first protection layer is located between the second protection layer and the MTJ stack. There is a notch between the second protection layer and the SOT layer.


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