The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Dec. 18, 2023
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chia-Chang Hsu, Kaohsiung, TW;
Tang-Chun Weng, Chiayi, TW;
Cheng-Yi Lin, Yilan County, TW;
Yung-Shen Chen, Kaohsiung, TW;
Chia-Hung Lin, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H10B 61/00 (2023.02); H10N 50/01 (2023.02);
Abstract
A semiconductor memory device includes a substrate having a conductor region thereon, an interlayer dielectric layer on the substrate, and a conductive via electrically connected to the conductor region. The conductive via has a lower portion embedded in the interlayer dielectric layer and an upper portion protruding from a top surface of the interlayer dielectric layer. The upper portion has a rounded top surface. A storage structure conformally covers the rounded top surface.