The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Feb. 16, 2022
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Peter Rabkin, Cupertino, CA (US);
Masaaki Higashitani, Cupertino, CA (US);
Assignee:
Sandisk Technologies, Inc., Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); H01L 29/15 (2006.01); H10B 41/10 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); H01L 29/151 (2013.01); H10B 41/10 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02);
Abstract
A three-dimensional memory device containing a plurality of levels of memory elements includes a memory film containing a layer stack that includes a resonant tunneling barrier stack, a semiconductor barrier layer, and a memory material layer located between the resonant tunneling barrier stack and the semiconductor barrier layer, a semiconductor channel, and a control gate electrode.
Quick Actions:
Rabkin, Peter. (2025). Three dimensional memory device containing resonant tunneling barrier and high mobility channel and method of making thereof (U.S. Patent No. 12245425). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12245425
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