The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2025

Filed:

Feb. 23, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Nikhil Jain, Apple Valley, MN (US);

Sagarika Mukesh, Albany, NY (US);

Devika Sarkar Grant, Amsterdam, NY (US);

Prabudhya Roy Chowdhury, Albany, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Kisik Choi, Watervliet, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 23/48 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0665 (2013.01); H01L 23/481 (2013.01); H01L 29/0649 (2013.01); H01L 29/41733 (2013.01); H01L 29/42392 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01);
Abstract

Provided is a semiconductor device. The semiconductor device comprises a transistor comprising a plurality of source/drain epitaxies. The semiconductor device further comprises at least one backside power rail under the transistor. The semiconductor device further comprises a backside inter-layer dielectric (ILD) located between the plurality of source/drain epitaxies and the at least one power rail. The semiconductor device further comprises a first backside contact connecting a first source/drain epitaxy to the at least one backside power rail. The semiconductor device further comprises one or more contact placeholders formed under the other source/drain epitaxies.


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