The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2025

Filed:

Aug. 01, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chien-Ying Chen, Hsinchu, TW;

Lee-Chung Lu, Hsinchu, TW;

Li-Chun Tien, Hsinchu, TW;

Ta-Pen Guo, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); G06F 30/392 (2020.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); G06F 30/392 (2020.01); H01L 27/092 (2013.01);
Abstract

An IC device includes first through third active areas extending in a first direction and a first gate structure extending perpendicular to and overlying each of the first through third active areas. Each of the first through third active areas includes a first portion adjacent to the first gate structure in the first direction and a second portion adjacent to the first portion and including an endpoint of the corresponding active area, the first active area is positioned between the second and third active areas and includes the endpoint positioned under the first gate structure, and each of the second and third active areas includes the endpoint positioned away from the gate structure in a second direction opposite to the first direction.


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