The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Mar. 08, 2022
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventors:
Shuangshuang Wu, Hefei, CN;
Tzung-Han Lee, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/304 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/304 (2013.01); H01L 21/76831 (2013.01); H01L 21/76832 (2013.01); H01L 23/481 (2013.01);
Abstract
A method for manufacturing a semiconductor structure, including: providing a base; forming a Through Silicon Via (TSV) in the base, with a depth of the TSV being less than a thickness of the base; and forming a liner layer on a sidewall and the bottom of the TSV, and forming a conductive layer in the TSV, the liner layer including a polish-stop layer.
Wu, Shuangshuang. (2025). Semiconductor structure and method for manufacturing semiconductor structure (U.S. Patent No. 12243779). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12243779
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile