The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Jun. 29, 2022
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Rui Li, San Jose, CA (US);
Xiangjin Xie, Fremont, CA (US);
Tae Hong Ha, San Jose, CA (US);
Xianmin Tang, San Jose, CA (US);
Lu Chen, Cupertino, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76862 (2013.01); C23C 16/34 (2013.01); C23C 16/45544 (2013.01); H01L 21/76843 (2013.01);
Abstract
Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.