The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2025

Filed:

Oct. 17, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Siva Kumar Chinthu, Bangalore, IN;

Suresh Pasupula, Bangalore, IN;

Devesh Dwivedi, Bangalore, IN;

Chunsung Chiang, San Jose, CA (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/06 (2006.01); G11C 7/10 (2006.01); G11C 7/12 (2006.01);
U.S. Cl.
CPC ...
G11C 7/067 (2013.01); G11C 7/109 (2013.01); G11C 7/12 (2013.01);
Abstract

Embodiments of the disclosure provide memory circuit, a sense amplifier and associated method for reading a resistive state in a memory device. The sense amplifier includes a bit cell configurable to a high or low resistance state; a sensing circuit that detects a voltage drop across the bit cell in response to an applied read current during a read operation and generates a high or low logic output at an output node; and a pulse generation circuit that increases the applied read current with an injected current pulse when a low to high transition of the resistive state of the bit cell is detected.


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