The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2025

Filed:

Sep. 23, 2021
Applicant:

Ap Memory Technology Corporation, Hsinchu County, TW;

Inventors:

Hsin-Nan Chueh, Hsinchu County, TW;

Wenliang Chen, Hsinchu County, TW;

Chin-Hung Liu, Hsinchu County, TW;

Assignee:

AP MEMORY TECHNOLOGY CORPORATION, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/44 (2006.01); G06F 11/16 (2006.01); G11C 29/42 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
G11C 29/4401 (2013.01); G06F 11/1666 (2013.01); G11C 29/42 (2013.01); H01L 24/14 (2013.01); G11C 2029/4402 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/15311 (2013.01);
Abstract

A memory device includes a memory die, a non-volatile memory circuit, and a logic die. The memory die includes a first memory space and a second memory space. The non-volatile memory circuit stores a repair table file corresponding to the first memory space. The logic die is coupled to the memory die and the non-volatile memory. The logic die selectively accesses the first memory space or the second memory space of the memory die according a comparing result of an input address and the repair table file. The memory die and is different from the logic die.


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