The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Aug. 14, 2023
Western Digital Technologies, Inc., San Jose, CA (US);
Chih-Ching Hu, Pleasanton, CA (US);
Yung-Hung Wang, San Jose, CA (US);
Ming Mao, Dublin, CA (US);
Ming Jiang, San Jose, CA (US);
Yukimasa Okada, Cupertino, CA (US);
Goncalo Baiao de Albuquerque, San Jose, CA (US);
Western Digital Technologies, Inc., San Jose, CA (US);
Abstract
A two-dimensional magnetic recording (TDMR) read head includes a lower reader and an upper reader. Each of the lower reader and the upper reader may have a dual free layer (DFL) magnetic tunnel junction structure having first and second free layers located between lower and upper shields. A synthetic antiferromagnetic (SAF) structure is located on a side of each magnetic tunnel junction. A sidewall insulating layer is located between the lower soft bias layer of the SAF structure and the first free layer. The sidewall insulating layer can have a reduced height such that an upper soft bias layer of the SAF structure is in direct contact with a sidewall of the second free layer, or the upper portion of the sidewall insulating layer located between the upper soft bias layer of the SAF structure and the sidewall of the second free layer has a reduced thickness.