The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
May. 12, 2020
Tokyo Electron Limited, Tokyo, JP;
Nobuo Matsuki, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of forming an insulation film on a substrate, includes: reacting, as a film-forming gas, an oxygen-containing silicon compound gas represented by formula below with a non-oxidizing hydrogen-containing gas in a state in which at least the non-oxidizing hydrogen-containing gas is plasmarized, to form a film of a flowable silanol compound on the substrate; and subsequently, annealing the substrate to turn the flowable silanol compound into the insulation film. SiO(O—CH)CH(where m, n, and a are arbitrary integers of 1 or more, β, Γ, x, and y are arbitrary integers of 0 or more, and β and Γ are not 0 at a same time).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile