The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Jul. 20, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Chao Lin, Hsinchu, TW;

Yu-Sheng Chen, Taoyuan, TW;

Da-Ching Chiou, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/20 (2023.01); H01L 23/528 (2006.01); H10B 63/10 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/231 (2023.02); H01L 23/5283 (2013.01); H10B 63/10 (2023.02); H10N 70/063 (2023.02); H10N 70/8265 (2023.02); H10N 70/841 (2023.02);
Abstract

A memory cell includes a dielectric structure, a storage element structure, and a top electrode. The storage element structure is disposed in the dielectric structure, and the storage element structure includes a first portion and a second portion. The first portion includes a first side and a second side opposite to the first side, where a width of the first side is less than a width of the second side. The second portion is connected to the second side of the first portion, where a width of the second portion is greater than the width of the first side. The top electrode is disposed on the storage element structure, where the second portion is disposed between the first portion and the top electrode.


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