The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
Jan. 20, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Yu-Chao Lin, Hsinchu, TW;
Chih-Sheng Chang, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 51/30 (2023.01); H01L 23/522 (2006.01); H01L 29/66 (2006.01); H10B 63/10 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 51/30 (2023.02); H01L 23/5226 (2013.01); H01L 29/6656 (2013.01); H10B 63/10 (2023.02); H10N 70/231 (2023.02);
Abstract
A semiconductor structure includes a base layer, a metal-containing gate, a high-k layer and a spacer. The metal-containing gate is disposed over the base layer. The high-k layer is disposed between the base layer and the metal-containing gate. The high-k layer has a protruding portion that protrudes out from a bottom of the metal-containing gate. The spacer is disposed on the sidewall of the metal-containing gate and covers the protruding portion of the high-k layer.