The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
Aug. 17, 2023
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chi-Hsuan Tang, Kaohsiung, TW;
Chung-Ting Huang, Kaohsiung, TW;
Bo-Shiun Chen, Taichung, TW;
Chun-Jen Chen, Tainan, TW;
Yu-Shu Lin, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/0245 (2013.01); H01L 29/0657 (2013.01); H01L 29/66553 (2013.01); H01L 29/6656 (2013.01);
Abstract
A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming an epitaxial layer adjacent to the gate structure, and then forming a first cap layer on the epitaxial layer. Preferably, a top surface of the first cap layer includes a curve concave upward and a bottom surface of the first cap layer includes a planar surface higher than a top surface of the substrate.