The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Nov. 03, 2020
Applicant:

Wolfspeed, Inc., Durham, NC (US);

Inventors:

Edward Robert Van Brunt, Raleigh, NC (US);

Sei-Hyung Ryu, Cary, NC (US);

Assignee:

Wolfspeed, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7815 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/42364 (2013.01); H01L 29/66068 (2013.01); H01L 21/823481 (2013.01); H01L 21/823487 (2013.01); H01L 27/088 (2013.01); H01L 29/4238 (2013.01); H01L 29/66712 (2013.01); H01L 29/7802 (2013.01); H01L 29/7811 (2013.01);
Abstract

Semiconductor devices, and in particular protection structures for semiconductor devices that include sensor arrangements are disclosed. A semiconductor device may include a sensor region, for example a current sensor region that occupies a portion of an overall active area of the device. The current sensor region may be configured to provide monitoring of device load currents during operation. Semiconductor devices according to the present disclosure include one or more protection structures that are configured to allow the semiconductor devices to withstand transient voltage events without device failure. A protection structure may include an insulating layer that is provided in a transition region between a device region and the sensor region of the semiconductor device. In the example of an insulated gate semiconductor device, the insulating layer of the protection structure may include a material with a greater breakdown voltage than a breakdown voltage of a gate insulating layer.


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