The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
Jun. 28, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventor:
Shiang-Bau Wang, Pingzchen, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 27/0886 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract
In a gate replacement process, a dummy gate and adjacent structure, such as a source/drain region, are formed. The dummy gate is removed, at least in part, using a directional etch to remove some but not all of the dummy gate to form a trench. A portion of the dummy gate remains and protects the adjacent structure. A gate electrode can then be formed in the trench. A two step process can be employed, using an initial isotropic etch followed by the directional etch.