The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
Nov. 01, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
ChihCheng Liu, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A semiconductor device and a forming method thereof are provided. The semiconductor device includes a substrate, a gate structure and a self-aligned contact structure. The substrate includes a source region and a drain region; the gate structure is formed on the substrate and are located between the source region and the drain region; and the self-aligned contact structure is formed on the substrate and includes a first contact structure, a second contact structure and a third contact structure sequentially connected in a direction perpendicular to the substrate, the first contact structure is in contact with the source region or the drain region, and a cross-sectional area of the second contact structure in a direction parallel to the substrate is greater than that of the first contact structure and that of the third contact structure in the direction parallel to the substrate.