The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Dec. 29, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Huimei Zhou, Albany, NY (US);

Su Chen Fan, Cohoes, NY (US);

Shogo Mochizuki, Clifton Park, NY (US);

Peng Xu, Santa Clara, CA (US);

Nicolas J. Loubet, Guilderland, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/02 (2006.01); H01L 21/822 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H10B 41/20 (2023.01); H10B 43/20 (2023.01); H10B 53/20 (2023.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0688 (2013.01); H01L 21/02115 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/8221 (2013.01); H01L 21/823412 (2013.01); H01L 21/823487 (2013.01); H01L 27/088 (2013.01); H01L 29/1037 (2013.01); H01L 29/6656 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H10B 41/20 (2023.02); H10B 43/20 (2023.02); H10B 53/20 (2023.02); H01L 21/30625 (2013.01); H01L 21/3065 (2013.01); H01L 21/31111 (2013.01); H01L 29/41741 (2013.01);
Abstract

A method of forming stacked vertical field effect devices is provided. The method includes forming a layer stack on a substrate, wherein the layer stack includes a first spacer layer on the substrate, a first protective liner on the first spacer layer, a first gap layer on the first protective liner, a second protective liner on the first gap layer, a second spacer layer on the second protective liner, a sacrificial layer on the second spacer layer, a third spacer layer on the sacrificial layer, a third protective liner on the third spacer layer, a second gap layer on the third protective liner, a fourth protective liner on the second gap layer, and a fourth spacer layer on the fourth protective liner. The method further includes forming channels through the layer stack, a liner layer on the sidewalls of the channels, and a vertical pillar in the channels.


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