The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
Jul. 31, 2023
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
Devices and methods of manufacture for a graduated, 'step-like,' semiconductor structure having two or more resonator trenches. A semiconductor structure may comprise a first resonator and a second resonator. The first resonator comprising a first metallic resonance layer and a capping plate having a bottom surface that is a first distance from a distal end of the first metallic resonance layer. The second resonator comprising a second metallic resonance layer and the capping plate, in which the bottom surface is a second distance from a from a distal end of the second metallic resonance layer, and in which first distance is different from the second distance.