The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
Mar. 11, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Kai-Qiang Wen, Taipei, TW;
Shih-Fen Huang, Jhubei, TW;
Shih-Chun Fu, Hsinchu, TW;
Chi-Yuan Shih, Hsinchu, TW;
Feng Yuan, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A device includes a fin on a substrate; a first transistor, including: a drain region and a first source region in the fin; and a first gate structure on the fin between the first source region and the drain region; a second transistor, including: the drain region and a second source region in the fin; and a second gate structure on the fin between the second source region and the drain region; a first resistor, including: the first source region and a first resistor region in the fin; and a third gate structure on the fin between the first source region and the first resistor region; and a second resistor, including: the second source region and a second resistor region in the fin; and a fourth gate structure on the fin between the second source region and the second resistor region.