The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Nov. 12, 2021
Applicant:

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;

Inventors:

Libin Zhang, Beijing, CN;

Yayi Wei, Beijing, CN;

Zhen Song, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 29/40 (2006.01); G03F 7/09 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 29/401 (2013.01); G03F 7/094 (2013.01);
Abstract

A method for manufacturing a semiconductor device. A photolithographic coating, including a first film, a photolithographic film, and a second film, is formed on the to-be-connected structure. Refractive indexes of the first film and the second film are smaller than 1. The photolithographic coating is exposed to a light having a first wavelength, to image the to-be-connected structure to a first region of the photolithographic film. The photolithographic coating is exposed to a light having a second wavelength through a mask, to image the mask to a second region of the photolithographic film. A region in which the first region and the second region overlap serves as a connection region corresponding to the to-be-connected structure, and thereby self-alignment between a layer of the to-be-connected structure and a layer where a contact hole is arranged is implemented.


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