The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
May. 07, 2020
Corning Incorporated, Corning, NY (US);
University-industry Cooperation Group of Kyung Hee University, Seoul, KR;
Mingqian He, Horseheads, NY (US);
Jin Jang, Seoul, KR;
Xiuling Li, Tianshui, CN;
Robert George Manley, Vestal, NY (US);
Karan Mehrotra, Painted Post, NY (US);
Nikolay Zhelev Zhelev, Painted Post, NY (US);
CORNING INCORPORATED, Corning, NY (US);
UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY, Seoul, KR;
Abstract
A thin-film transistor (TFT), includes: a substrate (); an organic semiconductor (OSC) layer () positioned on the substrate; a dielectric layer () positioned on the OSC layer; and a polymeric interlayer () disposed in-between the OSC layer and the dielectric layer, such that the dielectric layer is configured to exhibit a double layer capacitance effect. A method of forming a thin-film transistor, includes: providing a substrate; providing a bottom gate layer atop the substrate; disposing consecutively from the substrate, an organic semiconductor (OSC) layer, a dielectric layer, and a top gate layer; and patterning the OSC layer, the dielectric layer, and the top gate layer using a single mask.