The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Oct. 03, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Hung-Li Chiang, Taipei, TW;
Jung-Piao Chiu, Kaohsiung, TW;
Tzu-Chiang Chen, Hsinchu, TW;
Yu-Sheng Chen, Taoyuan, TW;
Xinyu Bao, Fremont, CA (US);
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 63/24 (2023.02); H10N 70/021 (2023.02); H10N 70/24 (2023.02); H10N 70/826 (2023.02); H10N 70/841 (2023.02); H10N 70/8822 (2023.02); H10N 70/8825 (2023.02); H10N 70/8828 (2023.02);
Abstract
A memory device includes a first electrode, a selector layer and a plurality of first work function layers. The first work function layers are disposed between the first electrode and the selector layer, and a work function of the first work function layer increases as the first work function layer becomes closer to the selector layer.