The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Jun. 01, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Beijing Superstring Academy of Memory Technology, BeiJing, CN;
Xiaoguang Wang, Hefei, CN;
Huihui Li, Hefei, CN;
Dinggui Zeng, Hefei, CN;
Jiefang Deng, Hefei, CN;
Kanyu Cao, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY, Beijing, CN;
Abstract
A method for manufacturing a semiconductor structure includes the following: providing a substrate; forming an MTJ structure and a first mask structure in sequence on the substrate; performing a patterning process on the first mask structure to form a first pattern extending in a first direction; transferring the first pattern to the MTJ structure; forming a second mask structure on the MTJ structure; performing a patterning process on the second mask structure to form a second pattern extending in a second direction, the first direction intersecting the second direction and being not perpendicular to the second direction; and performing a patterning process on the MTJ structure by utilizing the second pattern to form a cellular MTJ array, the first pattern and the second pattern together forming a cellular pattern.