The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2025

Filed:

Jan. 11, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Peng Yang, Hefei, CN;

Gongyi Wu, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H10B 12/482 (2023.02); H01L 21/76897 (2013.01); H01L 23/5225 (2013.01);
Abstract

The present disclosure provides a method of forming a semiconductor structure and a semiconductor structure. The method of forming a semiconductor structure includes: providing an initial structure, where the initial structure includes a substrate and bit line structures arranged at intervals on the substrate; forming an initial protective structure, where the initial protective structure at least covers a part of sidewalls of each of the bit line structures, and the initial protective structure has a first height in a direction parallel to the bit line structures; forming a shielding structure, where the shielding structure at least covers a part of sidewalls of the initial protective structure; and removing at least a part of the initial protective structure exposed by the shielding structure by using the shielding structure as an etching selection layer, to form protective structures each having a second height.


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