The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Oct. 22, 2021
Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Yongfei Li, Beijing, CN;
Liuyue Yin, Beijing, CN;
Haifeng Hu, Beijing, CN;
Huan Liu, Beijing, CN;
Mengmeng Li, Beijing, CN;
Yuancheng Li, Beijing, CN;
Yu Jiang, Beijing, CN;
Qin Zeng, Beijing, CN;
Zouming Xu, Beijing, CN;
Jian Tian, Beijing, CN;
Chunjian Liu, Beijing, CN;
Xintao Wu, Beijing, CN;
Jie Lei, Beijing, CN;
Jie Wang, Beijing, CN;
Jianying Zhang, Beijing, CN;
Hefei Xinsheng Optoelectronics Co., Ltd., Anhui, CN;
BOE Technology Group Co., Ltd., Beijing, CN;
Abstract
A backplane, a backlight source, an illumination device and a displaying device. The backplane comprises a substrate; a first metal trace layer disposed on one surface of the substrate; an insulating layer disposed on a side, away from the substrate, of the first metal trace layer; a second metal trace layer disposed on a side, away from the substrate, of the insulating layer, an overlapping area existing between an orthographic projection of the second metal trace layer on the substrate and an orthographic projection of the first metal trace layer on the substrate; and a barrier layer disposed between the first metal trace layer and the second metal trace layer, an orthographic projection of the barrier layer on the substrate covering the overlapping area, and the barrier layer being used for preventing metals in the first metal trace layer and the second metal trace layer from growing towards each other.