The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Mar. 22, 2024
Applicant:
Atomera Incorporated, Los Gatos, CA (US);
Inventor:
Donghun Kang, San Jose, CA (US);
Assignee:
ATOMERA INCORPORATED, Los Gatos, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/15 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66742 (2013.01); H01L 29/0603 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/15 (2013.01); H01L 29/158 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/41733 (2013.01); H01L 29/41741 (2013.01); H01L 29/41766 (2013.01); H01L 29/66439 (2013.01); H01L 29/775 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01); H01L 29/151 (2013.01); H01L 29/42392 (2013.01);
Abstract
A method for making a semiconductor device may include forming spaced apart gate stacks on a substrate with adjacent gate stacks defining a respective trench therebetween. Each gate stack may include alternating layers of first and second semiconductor materials, with the layers of the second semiconductor material defining nanostructures. The method may further include forming respective source/drain regions within the trenches, respective insulating regions adjacent lateral ends of the layers of the first semiconductor material, and respective conductive contact liners in the trenches.