The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2025

Filed:

Jan. 19, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Martin F. Schubert, Mountain View, CA (US);

Vladimir Odnoblyudov, Eagle, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/16 (2023.01); H01L 27/02 (2006.01); H01L 33/06 (2010.01); H01L 33/08 (2010.01); H01L 33/32 (2010.01); H01L 33/62 (2010.01); H05B 45/58 (2020.01); H05B 47/105 (2020.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 25/167 (2013.01); H01L 27/0255 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/62 (2013.01); H05B 45/58 (2020.01); H05B 47/105 (2020.01); H01L 27/0248 (2013.01); H01L 33/00 (2013.01); H01L 2924/0002 (2013.01); Y02B 20/30 (2013.01);
Abstract

Solid state transducers with state detection, and associated systems and methods are disclosed. A solid state transducer system may include a support substrate that carries a solid state emitter and a state device. The solid state emitter and the state device may be stacked along a common axis. Further, the state device may be positioned to detect a state of the solid state emitter and/or an electrical path of which the solid state emitter forms a part. The solid state emitter may include a first semiconductor component, a second semiconductor component, and an active region between the first and second semiconductor components. The state device may include a state-sensing component having a composition different than that of the active region and the first and second semiconductor components. In some embodiments, the state-sensing component may include an electrostatic discharge protection device, a thermal sensor, a photosensor, or a combination thereof.


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