The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Feb. 16, 2021
Intel Corporation, Santa Clara, CA (US);
Kushal Sreedhar, Portland, OR (US);
Christopher Mozak, Portland, OR (US);
Mahmoud Elassal, King City, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A scheme intelligently balances existing TM0 resources to simultaneously boost both AC and DC power delivery topologies without incurring a penalty on either area or IR drop. TM0 tracks are either regular or staples. Regular tracks are continuous across the width of an active silicon. Staples are located right under the respective TM1 (Top Metal 1) tracks. TM1 is above TM0 in the hierarchy of metal layers. The staples aid in increasing the total TV0 (Top Via 0 that connects TM0 to TM1) density for all supplies simultaneously as they are consecutively track-shared between the TM1 tracks. This boost in via density helps reduce the net series resistance of the MIM capacitor as the Manhattan (displacement) distance between the supply and ground vias is now reduced. The outcome is a high-density high-bandwidth MIM capacitor, located between the main power distribution layers in the die metal stack—TM0 and TM1.