The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2025

Filed:

Jun. 05, 2023
Applicant:

Semiconductor Components Industries, Llc, Scottsdale, AZ (US);

Inventors:

Francis J. Carney, Mesa, AZ (US);

Jefferson W. Hall, Chandler, AZ (US);

Michael J. Seddon, Gilbert, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/02 (2006.01); H01L 21/288 (2006.01); H01L 21/304 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01); H01L 21/768 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/482 (2006.01); H01L 23/495 (2006.01); H01L 23/544 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 27/14 (2006.01); H01L 27/146 (2006.01); H01L 29/08 (2006.01); H02M 3/158 (2006.01); H01L 23/14 (2006.01); H01L 23/15 (2006.01); H01L 23/367 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49827 (2013.01); H01L 21/02035 (2013.01); H01L 21/288 (2013.01); H01L 21/304 (2013.01); H01L 21/3065 (2013.01); H01L 21/308 (2013.01); H01L 21/3083 (2013.01); H01L 21/4825 (2013.01); H01L 21/4853 (2013.01); H01L 21/486 (2013.01); H01L 21/565 (2013.01); H01L 21/67069 (2013.01); H01L 21/6835 (2013.01); H01L 21/76877 (2013.01); H01L 21/76898 (2013.01); H01L 21/78 (2013.01); H01L 22/12 (2013.01); H01L 22/26 (2013.01); H01L 23/3107 (2013.01); H01L 23/3114 (2013.01); H01L 23/481 (2013.01); H01L 23/4822 (2013.01); H01L 23/49503 (2013.01); H01L 23/4951 (2013.01); H01L 23/49541 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 23/49811 (2013.01); H01L 23/49838 (2013.01); H01L 23/49866 (2013.01); H01L 23/544 (2013.01); H01L 23/562 (2013.01); H01L 24/00 (2013.01); H01L 24/05 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 27/14 (2013.01); H01L 27/14683 (2013.01); H01L 29/0847 (2013.01); H02M 3/158 (2013.01); H01L 23/147 (2013.01); H01L 23/15 (2013.01); H01L 23/3677 (2013.01); H01L 23/49816 (2013.01); H01L 27/14625 (2013.01); H01L 27/14685 (2013.01); H01L 2221/68327 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/5446 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05084 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05172 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13116 (2013.01); H01L 2225/06555 (2013.01); H01L 2225/06593 (2013.01); H01L 2225/06596 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A semiconductor device has a first semiconductor die and second semiconductor die with a conductive layer formed over the first semiconductor die and second semiconductor die. The second semiconductor die is disposed adjacent to the first semiconductor die with a side surface and the conductive layer of the first semiconductor die contacting a side surface and the conductive layer of the second semiconductor die. An interconnect, such as a conductive material, is formed across a junction between the conductive layers of the first and second semiconductor die. The conductive layer may extend down the side surface of the first semiconductor die and further down the side surface of the second semiconductor die. An extension of the side surface of the first semiconductor die can interlock with a recess of the side surface of the second semiconductor die. The conductive layer extends over the extension and into the recess.


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