The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Oct. 11, 2019
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
James S. Sims, Tigard, OR (US);
Shane Tang, West Linn, OR (US);
Vikrant Rai, Sherwood, OR (US);
Andrew McKerrow, Lake Oswego, OR (US);
Huatan Qiu, Portland, OR (US);
Assignee:
LAM RESEARCH CORPORATION, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0217 (2013.01); C23C 16/45536 (2013.01); H01J 37/32174 (2013.01); H01L 21/02208 (2013.01); H01L 21/0228 (2013.01); H01L 21/67098 (2013.01);
Abstract
A method for depositing a silicon nitride layer on a stack is provided. The method comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an Nplasma conversion, and providing an Hplasma conversion.