The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2025

Filed:

Jan. 17, 2023
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Yoonjoo Eom, Hefei, CN;

Lin Wang, Hefei, CN;

Zhiqiang Zhang, Hefei, CN;

Yuanyuan Gong, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/14 (2006.01); G11C 29/36 (2006.01); G11C 29/46 (2006.01);
U.S. Cl.
CPC ...
G11C 29/46 (2013.01); G11C 29/14 (2013.01); G11C 29/36 (2013.01);
Abstract

Embodiments of the present disclosure provide a control method, a semiconductor memory, and an electronic device. When the semiconductor memory is in a preset test mode, a first Model Register (MR) and a second MR related to a Data Pin (DQ) are allowed to directly define the impedance of a Data Mask Pin (DM). The DM does not need to add definition of an output driver state and a related control circuit for the preset test mode to ensure that the preset test mode is adapted to the DM. The impedance of the DM may be tested in the preset test mode to avoid circuit processing errors.


Find Patent Forward Citations

Eom, Yoonjoo. (2025). Control method, semiconductor memory, and electronic device (U.S. Patent No. 12230348). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12230348

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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