The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Jun. 25, 2021
Intel Corporation, Santa Clara, CA (US);
Hemant P. Rao, Albuquerque, NM (US);
Raymond W. Zeng, Sunnyvale, CA (US);
Prashant S. Damle, Portland, OR (US);
Zion S. Kwok, Burnaby, CA;
Kiran Pangal, Fremont, CA (US);
Mase J. Taub, Folsom, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A read technique for both SLC (single level cell) and MLC (multi-level cell) cross-point memory can mitigate drift-related errors with minimal or no drift tracking. In one example, a read at a higher magnitude voltage is applied first, which causes the drift for cells in a lower threshold voltage state to be reset. In one example, the read at the first voltage can be a full float read to minimize disturb. A second read can then be performed at a lower voltage without the need to adjust the read voltage due to drift.