The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2025

Filed:

Aug. 12, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Vamsi Pavan Rayaprolu, Santa Clara, CA (US);

Aswin Thiruvengadam, El Dorado Hills, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4076 (2006.01); G11C 7/24 (2006.01); G11C 11/4096 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4096 (2013.01); G11C 7/24 (2013.01); G11C 11/4076 (2013.01);
Abstract

Methods, systems, and devices for a model for predicting memory system performance are described. A memory system may generate a set of read commands and perform a first set of read operations at a memory device according to the generated read commands. The memory system may generate information indicating a performance of the memory device based on the first set of read operations and may update one or more coefficients of a model that correlates the information with a change in a read window. In some cases, the memory system may model the change in a read window based on the information and update one or more parameters associated with read operations based on the modelled change in the read window. The memory system may perform a second set of read operations at the memory device using the one or more updated parameters.


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