The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2025

Filed:

Jan. 27, 2021
Applicant:

Siltronic Ag, Munich, DE;

Inventors:

Toni Lehmann, Oederan, DE;

Dirk Zemke, Ach, AT;

Assignee:

SILTRONIC AG, Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/10 (2006.01); C03B 20/00 (2006.01); C03C 17/00 (2006.01); C03C 17/02 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 15/10 (2013.01); C03B 20/00 (2013.01); C03C 17/004 (2013.01); C03C 17/02 (2013.01); C30B 29/06 (2013.01); C03C 2217/91 (2013.01); C03C 2218/345 (2013.01);
Abstract

A fused quartz crucible for pulling a single crystal of silicon by the Czochralski technique, has an inner side with an inner layer of fused quartz that forms a surface, the inner layer being provided with a crystallization promoter which on heating of the fused quartz crucible during use, in crystal pulling, causes crystallization of fused quartz to form b-cristobalite, wherein the concentration C of synthetically obtained SiOat a distance d from the surface is greater than the concentration of synthetically obtained SiOat a distance d2 from the surface, where d2 is greater than d. Multiple crystals can be grown while maintaining high crystal quality.


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