The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Mar. 23, 2023
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Tadahiro Ishizaka, Nirasaki, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); C23C 16/02 (2006.01); C23C 16/06 (2006.01); C23C 16/16 (2006.01); C23C 16/455 (2006.01); H01L 21/285 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45536 (2013.01); C23C 16/0272 (2013.01); C23C 16/06 (2013.01); C23C 16/16 (2013.01); H01L 21/285 (2013.01); H01L 21/28568 (2013.01); H01L 21/3205 (2013.01); H01L 21/67017 (2013.01); H01L 21/76877 (2013.01);
Abstract
A ruthenium film forming method includes: causing chlorine to be adsorbed to an upper portion of a recess at a higher density than to a lower portion of the recess by supplying a chlorine-containing gas to a substrate including an insulating film and having the recess; and forming a ruthenium film in the recess by supplying a Ru-containing precursor to the recess to which the chlorine is adsorbed.
Quick Actions:
Ishizaka, Tadahiro. (2025). Ruthenium film forming method and substrate processing system (U.S. Patent No. 12227841). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12227841
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile