The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Oct. 21, 2021
National University Corporation Nagaoka University of Technology, Nagaoka, JP;
Atsuhito Sawabe, Sagamihara, JP;
Yutaka Kimura, Sagamihara, JP;
Waseda University, Tokyo, JP;
Disco Corporation, Tokyo, JP;
Hideo Aida, Nagaoka, JP;
Atsuhito Sawabe, Sagamihara, JP;
Yutaka Kimura, Sagamihara, JP;
Jun Mizuno, Tokyo, JP;
Ryuji Oshima, Tokyo, JP;
National University Corporation Nagaoka University of Technology, Nagaoka, JP;
WASEDA UNIVERSITY, Tokyo, JP;
DISCO Corporation, Tokyo, JP;
Other;
Abstract
Provided are a structure for producing a high-quality single crystal diamond, and a method for manufacturing the structure for producing diamond. A structure for producing a diamond is composed of a base substrate and an Ir thin film formed on the base substrate. The thermal expansion coefficient of the base substrate is 5 times or less of the thermal expansion coefficient of diamond and the melting point of the base substrate is 700° C. or higher. The peak angle in the X-ray diffraction pattern of the Ir thin film is different from the peak angle in the X-ray diffraction pattern of the base substrate.