The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2025

Filed:

Oct. 04, 2021
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

Inventor:

Katsuya Daimon, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); H03H 9/145 (2006.01); H03H 9/25 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02574 (2013.01); H03H 9/02559 (2013.01); H03H 9/02637 (2013.01); H03H 9/02866 (2013.01); H03H 9/02984 (2013.01); H03H 9/145 (2013.01); H03H 9/25 (2013.01);
Abstract

An acoustic wave device includes a silicon support substrate, a silicon nitride film on the support substrate, a silicon oxide film on the silicon nitride film, a piezoelectric layer on the silicon oxide film and using Y-cut X-SAW propagation lithium tantalate, and an IDT electrode on the piezoelectric layer. A film thickness of the piezoelectric layer is equal to or less than about 1λ, Euler angles of the piezoelectric layer are (0±5°, θ, 0±5°) or (0±5°, θ, 180±5°), θ in the Euler angles of the piezoelectric layer is about 95.5°≤θ<117.5° or about −84.5°≤θ<−62.5°, and a relationship between θ in the Euler angles of the piezoelectric layer and a film thickness of the silicon nitride film is a combination shown in Table 1 or Table 2.


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