The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2025
Filed:
Feb. 10, 2023
Applicant:
Silanna Uv Technologies Pte Ltd, Singapore, SG;
Inventor:
Petar Atanackovic, Henley Beach South, AU;
Assignee:
Silanna UV Technologies Pte Ltd, Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/26 (2010.01); H01L 29/267 (2006.01); H01L 33/00 (2010.01); H01L 33/04 (2010.01); H01L 33/40 (2010.01); H01S 5/183 (2006.01); H01S 5/32 (2006.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01L 33/26 (2013.01); H01L 29/267 (2013.01); H01L 33/002 (2013.01); H01L 33/005 (2013.01); H01L 33/04 (2013.01); H01L 33/40 (2013.01); H01S 5/3206 (2013.01); H01S 5/183 (2013.01); H01S 5/34 (2013.01); H01S 5/3425 (2013.01);
Abstract
In some embodiments, a semiconductor structure includes: a first epitaxial oxide semiconductor layer; a metal layer; and a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer. The contact layer can include an epitaxial oxide semiconductor material. The contact layer can also include a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer, or a gradient in a strain of the epitaxial oxide semiconductor material over a region adjacent to the metal layer.