The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2025

Filed:

May. 16, 2024
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Francesco Gramuglia, Augsburg, DE;

Eng Huat Toh, Singapore, SG;

Ping Zheng, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); H01L 31/035272 (2013.01); H01L 31/18 (2013.01);
Abstract

The present disclosure generally relates to semiconductor devices for use in optoelectronic/photonic applications and integrated circuit (IC) chips. More particularly, the present disclosure relates to devices containing photodiodes such as avalanche photodiodes (APDs) and single photon avalanche diodes (SPADs). The present disclosure may provide a device including a substrate, a first well of a first conductivity type in the substrate, a second well of a second conductivity type in the substrate, and a buried layer of the second conductivity type in the substrate. The buried layer may be below the first well and the second well. The buried layer may have a first section and a second section, in which the first section has a larger thickness than the second section.


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