The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2025
Filed:
Jul. 18, 2022
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Ching-Chung Yang, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 21/266 (2013.01); H01L 29/66492 (2013.01); H01L 29/7833 (2013.01); H01L 21/26513 (2013.01);
Abstract
A semiconductor device includes a substrate of first conductivity type; a first heavily doped region and a second heavily doped region of second conductivity type spaced apart from the first heavily doped region, located in the substrate; a channel region in the substrate and between the first heavily doped region and the second heavily doped region; a gate disposed on the channel region; a hard mask layer covering a top surface and a sidewall of the gate; and a spacer disposed on a sidewall of the hard mask layer.