The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2025
Filed:
Apr. 20, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shih-Ming Chang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
In a method of manufacturing a semiconductor device, a first conductive pattern is formed in a first interlayer dielectric (ILD) layer disposed over a substrate, a second ILD layer is formed over the first conductive pattern and the first ILD layer, a via contact is formed in the second ILD layer to contact an upper surface of the first conductive pattern, a second conductive pattern is formed over the via contact wherein a part of an upper surface of the via contact is exposed from the second conductive pattern in plan view, a part of the via contact is etched by using the second conductive pattern as an etching mask, thereby forming a space between the via contact and the second ILD layer, and a third ILD layer is formed over the second ILD layer.