Memory device and data approximation search method thereof

Abstract

A memory device and a data approximation search method thereof are proposed. The memory device includes a plurality of selection switch pairs, a plurality of memory cell string pairs, a sense amplifier, and a page buffer. The selection switch pairs receive multiple search data pairs, respectively. The memory cell string pairs are respectively coupled to a global bit line through the selection switch pairs. Each of the memory cell string pairs determines whether to provide current on the global bit line according to stored data of a selected memory cell pair and each of the search data pairs. The sense amplifier obtains multiple search results according to the current on the global bit line and at least one reference currents respectively corresponding to at least one similarity. The page buffer records the search results and generates similarity information by accumulating the search results.