The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2025

Filed:

Sep. 12, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Nagendra Prasad Ganesh Rao, Folsom, CA (US);

Paing Z. Htet, Union City, CA (US);

Sead Zildzic, Jr., Folsom, CA (US);

Thomas Fiala, Folsom, CA (US);

Jian Huang, Union City, CA (US);

Zhenming Zhou, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/30 (2006.01); G11C 16/08 (2006.01); G11C 16/16 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/08 (2013.01); G11C 16/16 (2013.01);
Abstract

A system can include a memory device containing blocks made up of wordlines respectively connected to sets of memory cells, and a processing device, operatively coupled with the memory device to perform operations including responsive to receiving a read request that specifies a block, determining a value of a metric reflective of a number of programmed wordlines of the block. The operations can also include responsive to determining, based on the value of the metric, that the block is in a partially programmed state, identifying a read voltage offset corresponding to the value of the metric, and performing, using the read voltage offset, a read operation responsive to the read request.


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